Перегляд за автором "Gentsar, P.O."

Результати 1-3 з 3

Infrared spectroscopy and electroreflectance in the region of fundamental optical transition E₀ of heavily doped n-GaAs (100)

Gentsar, P.O.; Vlasenko, O.I.; Vuichyk, M.V.; Stronski, O.V. (Functional Materials, 2009)

Studied were the reflection spectra of dynamically chemically etched n-GaAs (100) single crystals with electron concentration of 10¹⁸ to 5·10¹⁸ cm⁻³ in the 1.4-25 μm range as well as the electroreflection ones in 1.3-1.6 ...
Optical properties of AlN/n-Si(111) films obtained by method of HF reactive magnetron sputtering

Zayats, M.S.; Boiko, V.G.; Gentsar, P.O.; Vuichyk, M.V.; Lytvyn, O.S.; Stronski, A.V. (Functional Materials, 2010)
Study of surface influence on the n-Ge(110) electroreflectance spectra and their polarization spectroscopy

Vlasenko, O.I.; Gentsar, P.O.; Stronski, A.V. (Functional Materials, 2009)

The contribution of the real (preliminary chemically etched) (110) surface of n-Ge into electroreflectance effect (energy range 1.9-2.6 eV) basing on polarization anisotropy of electrooptical effect has been separated under ...

Результати 1-3 з 3

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